DMN63D8LDW-13

Teknik Özellikler

Pin Sayısı

6

Ds Breakdown Voltagemin

30V

Vgsth Max Id

1.5V @ 250μA

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30V

Tepe Reflow Süresi (maks. sn)

40

Number Of Elements

2

Max Power Dissipation

300mW

Fabrika Tedarik Süresi

15 Weeks

RoHS Durumu

ROHS3 Compliant

Fet Type

2 N-Channel (Dual)

Continuous Drain Current Id

220mA

Reference Standard

AEC-Q101

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Drainsource On Resistancemax

4.5Ohm

Gate Charge Qg Max Vgs

870nC @ 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Additional Feature

HIGH RELIABILITY

Rise Time

3.2ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

22pF @ 25V

Rds On Max Id Vgs

2.8 Ω @ 250mA, 10V

Terminal Sayısı

6

Turn On Delay Time

3.3 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2012

Drain Currentmax Abs Id

0.22A