DMN62D0UDW-13

Teknik Özellikler

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

60V

Vgsth Max Id

1V @ 250μA

Drain To Source Voltage Vdss

60V

Max Power Dissipation

320mW

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Fabrika Tedarik Süresi

16 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

350mA

Reference Standard

AEC-Q101

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G6

Power Max

320mW

Fet Type

2 N-Channel (Dual)

Gate Charge Qg Max Vgs

0.5nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Parça Durumu

Active

Drainsource On Resistancemax

2Ohm

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2015

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Input Capacitance Ciss Max Vds

32pF @ 30V

Rds On Max Id Vgs

2 Ω @ 100mA, 4.5V

Terminal Sayısı

6

Fet Feature

Standard

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.35A

Montaj

Surface Mount