DMN61D9UDW-7

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G6

Fet Type

2 N-Channel (Dual)

Power Max

320mW

Continuous Drain Current Id

350mA

Drainsource On Resistancemax

3.5Ohm

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Gate Charge Qg Max Vgs

0.4nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgsth Max Id

1V @ 250μA

Ds Breakdown Voltagemin

60V

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Max Power Dissipation

320mW

Drain To Source Voltage Vdss

60V

Fabrika Tedarik Süresi

16 Weeks

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.35A

Fet Feature

Standard

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Rds On Max Id Vgs

2 Ω @ 50mA, 5V

Input Capacitance Ciss Max Vds

28.5pF @ 30V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE