DMN61D8LVT-7

Teknik Özellikler

Drainsource On Resistancemax

2.4Ohm

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Gate Charge Qg Max Vgs

0.74nC @ 5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G6

Fet Type

2 N-Channel (Dual)

Power Max

820mW

Continuous Drain Current Id

630mA

Çalışma Sıcaklığı

-55°C~150°C TJ

Max Power Dissipation

820mW

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Drain To Source Voltage Vdss

60V

Fabrika Tedarik Süresi

17 Weeks

Vgsth Max Id

2V @ 1mA

Ds Breakdown Voltagemin

60V

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.63A

Fet Feature

Logic Level Gate

Input Capacitance Ciss Max Vds

12.9pF @ 12V

Rds On Max Id Vgs

1.8 Ω @ 150mA, 5V

Terminal Sayısı

6

Transistor Element Material

SILICON

Yayın Yılı

2015

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)