DMN5L06VKQ-7

Teknik Özellikler

Power Max

250mW

Fet Type

2 N-Channel (Dual)

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PDSO-F6

Feedback Capmax Crss

5 pF

REACH Uyumluluk Kodu

unknown

Parça Durumu

Active

Kılıf / Paket

SOT-563, SOT-666

Drainsource On Resistancemax

3Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

50V

Seri

Automotive, AEC-Q101

Vgsth Max Id

1.2V @ 250μA

Terminal Formu

FLAT

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Drain To Source Voltage Vdss

50V

Number Of Elements

2

Drain Currentmax Abs Id

0.28A

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

2 Ω @ 50mA, 5V

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

50pF @ 25V

Current Continuous Drain Id25

280mA Ta

Additional Feature

HIGH RELIABILITY

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Yayın Yılı

2007

Yüzey Montaj

YES