DMN5L06DMKQ-7

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yayın Yılı

2012

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

2 Ω @ 50mA, 5V

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

50pF @ 25V

Additional Feature

HIGH RELIABILITY

Fet Feature

Standard

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.305A

Montaj

Surface Mount

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Vgsth Max Id

1V @ 250μA

Ds Breakdown Voltagemin

50V

Fabrika Tedarik Süresi

16 Weeks

Max Power Dissipation

400mW

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

50V

Çalışma Sıcaklığı

-65°C~150°C TJ

Reference Standard

AEC-Q101

Continuous Drain Current Id

305mA

Feedback Capmax Crss

5 pF

Fet Type

2 N-Channel (Dual)

Power Max

400mW

Jesd30 Code

R-PDSO-G6

RoHS Durumu

ROHS3 Compliant

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

3Ohm

Kılıf / Paket

SOT-23-6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active