DMN3135LVT-7

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

305pF @ 15V

Rds On Max Id Vgs

60m Ω @ 3.1A, 10V

Terminal Sayısı

6

Rise Time

4.6ns

Additional Feature

HIGH RELIABILITY

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2012

Turn On Delay Time

2.6 ns

Fall Time Typ

2.5 ns

Drain Currentmax Abs Id

3.3A

Terminal Kaplaması

Matte Tin (Sn)

Fet Feature

Logic Level Gate

Radyasyon Dayanımı

No

Montaj

Surface Mount

Kurşunsuz

Lead Free

Turn Off Delay Time

13.1 ns

Vgsth Max Id

2.2V @ 250μA

Pin Sayısı

6

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

15 Weeks

Drain To Source Voltage Vdss

30V

Max Power Dissipation

840mW

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Number Of Channels

2

Tepe Reflow Süresi (maks. sn)

40

Fet Type

2 N-Channel (Dual)

RoHS Durumu

ROHS3 Compliant