DMN3035LWN-13

Teknik Özellikler

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Current Continuous Drain Id25

5.5A Ta

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-N6

Vgsth Max Id

2V @ 250μA

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2016

Drain Currentmax Abs Id

5.5A

Drainsource On Resistancemax

0.035Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

399pF @ 15V

Ds Breakdown Voltagemin

30V

Case Connection

DRAIN

Transistor Element Material

SILICON

Number Of Elements

2

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate Charge Qg Max Vgs

4.5nC @ 4.5V

Yüzey Montaj

YES

Terminal Sayısı

6

Fabrika Tedarik Süresi

14 Weeks

Terminal Formu

NO LEAD

Fet Type

2 N-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

35m Ω @ 4.8A, 10V

Parça Durumu

Active

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerVDFN

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e4