DMN3033LSDQ-13

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Jesd30 Code

R-PDSO-G8

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2015

Vgsth Max Id

2.1V @ 250μA

Drainsource On Resistancemax

0.02Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

725pF @ 15V

Pulsed Drain Currentmax Idm

30A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

30V

Number Of Elements

2

Transistor Element Material

SILICON

Continuous Drain Current Id

6.9A

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

13nC @ 10V

Reference Standard

AEC-Q101

Fabrika Tedarik Süresi

7 Weeks

Terminal Sayısı

8

Fet Type

2 N-Channel (Dual)

Terminal Formu

GULL WING

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Max

2W

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

20m Ω @ 6.9A, 10V

Parça Durumu

Active

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

2W

JESD-609 Kodu

e3