DMN3032LFDBQ-7

Teknik Özellikler

Number Of Elements

2

Case Connection

DRAIN

Continuous Drain Current Id

6.2A

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.03Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

500pF @ 15V

Fet Feature

Standard

Yayın Yılı

2015

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

2V @ 250μA

Montaj

Surface Mount

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jesd30 Code

S-PDSO-N6

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

6-UDFN Exposed Pad

JESD-609 Kodu

e4

Max Power Dissipation

1W

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

30m Ω @ 5.8A, 10V

Power Max

1W

Additional Feature

HIGH RELIABILITY

Montaj Tipi

Surface Mount

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

10.6nC @ 10V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Fet Type

2 N-Channel (Dual)

Terminal Formu

NO LEAD

Fabrika Tedarik Süresi

23 Weeks

Reference Standard

AEC-Q101

Terminal Sayısı

6