DMN3018SSD-13

Teknik Özellikler

Montaj

Surface Mount

Yayın Yılı

2013

Turn On Delay Time

4.3 ns

Vgsth Max Id

2.1V @ 250μA

Uzunluk

4.95mm

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

40

ECCN Kodu

EAR99

Genişlik

3.95mm

Weight

73.992255mg

Number Of Elements

2

Fall Time Typ

4.1 ns

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reference Standard

AEC-Q101

Fet Type

2 N-Channel (Dual)

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Yükseklik

1.5mm

Additional Feature

HIGH RELIABILITY

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Drain To Source Breakdown Voltage

30V

Element Configuration

Single

Continuous Drain Current Id

6.7A

Input Capacitance Ciss Max Vds

697pF @ 15V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

60A

Number Of Channels

2

Rise Time

4.4ns

Tepe Reflow Sıcaklığı (°C)

260

Fabrika Tedarik Süresi

15 Weeks

Terminal Sayısı

8