DMN2990UDJ-7

Teknik Özellikler

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

40

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2011

Drain Currentmax Abs Id

0.33A

Turn On Delay Time

4 ns

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Power Dissipation

350mW

Pin Sayısı

6

Drainsource On Resistancemax

0.99Ohm

Rise Time

3.3ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Contact Plating

Tin

Input Capacitance Ciss Max Vds

27.6pF @ 16V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Fall Time Typ

6.4 ns

Continuous Drain Current Id

450mA

Transistor Element Material

SILICON

Element Configuration

Dual

Pin Sayısı

6

Gate To Source Voltage Vgs

8V

Gate Charge Qg Max Vgs

0.5nC @ 4.5V

Fet Type

2 N-Channel (Dual)

Terminal Formu

FLAT

Fabrika Tedarik Süresi

16 Weeks

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Radyasyon Dayanımı

No

Rds On Max Id Vgs

990m Ω @ 100mA, 4.5V

Kurşunsuz

Lead Free

Additional Feature

HIGH RELIABILITY

Montaj Tipi

Surface Mount