DMN2050LFDB-7

Teknik Özellikler

Input Capacitance Ciss Max Vds

389pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

8ns

Drainsource On Resistancemax

0.045Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

20V

Number Of Elements

2

Fall Time Typ

8 ns

Case Connection

DRAIN

Continuous Drain Current Id

3.3A

Transistor Element Material

SILICON

Jesd30 Code

S-PDSO-N6

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Voltage Vdss

20V

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2013

Drain Currentmax Abs Id

4.5A

Fet Feature

Logic Level Gate

Vgsth Max Id

1V @ 250μA

Turn On Delay Time

5 ns

Parça Durumu

Active

Montaj Tipi

Surface Mount

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

45m Ω @ 5A, 4.5V

Max Power Dissipation

730mW

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e4

Turn Off Delay Time

25 ns

Kılıf / Paket

6-UDFN Exposed Pad

Fabrika Tedarik Süresi

20 Weeks

Reference Standard

AEC-Q101

Terminal Sayısı

6

Fet Type

2 N-Channel (Dual)

Gate Charge Qg Max Vgs

12nC @ 10V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)