DMN2041UFDB-13

Teknik Özellikler

Jesd30 Code

S-PDSO-N6

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2015

Vgsth Max Id

1.4V @ 250μA

Montaj

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

713pF @ 10V

Drainsource On Resistancemax

0.04Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Case Connection

DRAIN

Continuous Drain Current Id

4.7A

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

20V

Fet Type

2 N-Channel (Dual)

Terminal Formu

NO LEAD

Fabrika Tedarik Süresi

15 Weeks

Terminal Sayısı

6

Gate Charge Qg Max Vgs

15nC @ 8V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Rds On Max Id Vgs

40m Ω @ 4.2A, 4.5V

Power Max

1.4W

JESD-609 Kodu

e4

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

1.4W

Kılıf / Paket

6-UDFN Exposed Pad