DMN2008LFU-13

Teknik Özellikler

Yayın Yılı

2016

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Feature

Standard

Vgsth Max Id

1.5V @ 250μA

Montaj

Surface Mount

Drain To Source Voltage Vdss

20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-N6

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Transistor Element Material

SILICON

Continuous Drain Current Id

14.5A

Case Connection

DRAIN

Ds Breakdown Voltagemin

20V

Drainsource On Resistancemax

0.0096Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1418pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

42.3nC @ 10V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Fet Type

2 N-Channel (Dual)

Terminal Formu

NO LEAD

Fabrika Tedarik Süresi

17 Weeks

Terminal Sayısı

6

Kılıf / Paket

6-UFDFN Exposed Pad

JESD-609 Kodu

e4

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

1W

Rds On Max Id Vgs

5.4m Ω @ 5.5A, 4.5V

Power Max

1W

Montaj Tipi

Surface Mount

Parça Durumu

Active