DMHC6070LSD-13

Teknik Özellikler

JESD-609 Kodu

e3

Drain Currentmax Abs Id

3.1A

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

731pF @ 20V

Montaj

Surface Mount

Fabrika Tedarik Süresi

19 Weeks

Ds Breakdown Voltagemin

60V

Yayın Yılı

2016

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Currentmax Idm

15A

Current Continuous Drain Id25

3.1A 2.4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Matte Tin (Sn)

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.1Ohm

Vgsth Max Id

3V @ 250μA

Pin Sayısı

8

Drain To Source Voltage Vdss

60V

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Max Power Dissipation

1.6W

Fet Feature

Standard

Continuous Drain Current Id

2.4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Rds On Max Id Vgs

100m Ω @ 1A, 10V

Fet Type

2 N and 2 P-Channel (H-Bridge)

Configuration

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Gate Charge Qg Max Vgs

11.5nC @ 10V

Number Of Elements

4

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Kurşunsuz Kodu

yes