DMG9933USD-13

Teknik Özellikler

Max Power Dissipation

1.15W

Fet Feature

Logic Level Gate

Continuous Drain Current Id

4.6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Fet Type

2 P-Channel (Dual)

Pin Sayısı

8

Rds On Max Id Vgs

75m Ω @ 4.8A, 4.5V

Gate Charge Qg Max Vgs

6.5nC @ 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

260

Kurşunsuz Kodu

yes

Fall Time Typ

22.19 ns

Vgsth Max Id

1.1V @ 250μA

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.075Ohm

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

40

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

20V

Weight

73.992255mg

Gate To Source Voltage Vgs

12V

Drain To Source Breakdown Voltage

-20V

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Terminal Formu

GULL WING

Turn Off Delay Time

46.52 ns

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Number Of Channels

2

Terminal Kaplaması

Matte Tin (Sn)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

10.29ns

Transistor Application

SWITCHING

JESD-609 Kodu

e3