DMG8822UTS-13

Teknik Özellikler

Reach Svhc

No SVHC

Number Of Channels

2

Terminal Kaplaması

Matte Tin (Sn)

Current Continuous Drain Id25

4.9A Ta

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

21.1ns

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

20V

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Terminal Formu

GULL WING

Turn Off Delay Time

38.6 ns

Montaj Tipi

Surface Mount

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Input Capacitance Ciss Max Vds

841pF @ 10V

Turn On Delay Time

7.8 ns

Montaj

Surface Mount

Fabrika Tedarik Süresi

20 Weeks

Yayın Yılı

2009

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

9.6nC @ 4.5V

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

260

Kurşunsuz Kodu

yes

Fall Time Typ

10.1 ns

Max Power Dissipation

870mW

Fet Feature

Standard

Continuous Drain Current Id

4.9A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Seri

Automotive, AEC-Q101

Pin Sayısı

8

Fet Type

2 N-Channel (Dual) Common Drain

Kurşunsuz

Lead Free

Rds On Max Id Vgs

25m Ω @ 8.2A, 4.5V

Ambalaj

Tape & Reel (TR)