DMG6968UTS-13

Teknik Özellikler

Rds On Max Id Vgs

23m Ω @ 6.5A, 4.5V

Pin Sayısı

8

Fet Type

2 N-Channel (Dual) Common Drain

Terminal Sayısı

8

RoHS Durumu

ROHS3 Compliant

Max Power Dissipation

1W

Fet Feature

Logic Level Gate

Continuous Drain Current Id

5.2A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Fall Time Typ

234 ns

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Gate Charge Qg Max Vgs

8.8nC @ 4.5V

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

8

Radyasyon Dayanımı

No

Vgsth Max Id

950mV @ 250μA

Gate To Source Voltage Vgs

12V

Drain To Source Voltage Vdss

20V

Weight

157.991892mg

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Turn Off Delay Time

562 ns

Additional Feature

HIGH RELIABILITY

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Element Configuration

Dual

Rise Time

78ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Matte Tin (Sn)

Number Of Channels

2

Reach Svhc

No SVHC

ECCN Kodu

EAR99

JESD-609 Kodu

e3