DMG6602SVTQ-7

Teknik Özellikler

Transistor Application

SWITCHING

Current Continuous Drain Id25

3.4A 2.8A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Matte Tin (Sn)

Terminal Pozisyonu

DUAL

Number Of Channels

2

Reference Standard

AEC-Q101

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

15 Weeks

Ds Breakdown Voltagemin

30V

Yayın Yılı

2014

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

400pF @ 15V

ECCN Kodu

EAR99

Jesd30 Code

R-PDSO-G6

Max Junction Temperature Tj

150°C

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Elements

2

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Feedback Capmax Crss

80 pF

Gate Charge Qg Max Vgs

13nC @ 10V

Rds On Max Id Vgs

60m Ω @ 3.1A, 10V

Fet Type

N and P-Channel

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

2.8A

Fet Feature

Standard

Max Power Dissipation

840mW

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

30V

Power Dissipation

840mW

Operating Mode

ENHANCEMENT MODE