DMG5802LFX-7

Teknik Özellikler

Additional Feature

HIGH RELIABILITY

Turn Off Delay Time

32.18 ns

Transistor Element Material

SILICON

Uzunluk

5.1mm

Kılıf / Paket

6-VFDFN Exposed Pad

Genişlik

2.1mm

Rise Time

13.43ns

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1066.4pF @ 15V

Yayın Yılı

2013

Fet Feature

Logic Level Gate

Max Power Dissipation

980mW

Rds On Max Id Vgs

15m Ω @ 6.5A, 4.5V

Kurşunsuz

Lead Free

Fet Type

2 N-Channel (Dual) Common Drain

Pin Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Gate Charge Qg Max Vgs

31.3nC @ 10V

Kurşunsuz Kodu

yes

Yükseklik

800μm

Vgsth Max Id

1.5V @ 250μA

Operating Mode

ENHANCEMENT MODE

Terminal Formu

FLAT

Drain To Source Breakdown Voltage

24V

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Reach Svhc

No SVHC

Transistor Application

SWITCHING

JESD-609 Kodu

e4

Turn On Delay Time

3.69 ns

Fabrika Tedarik Süresi

16 Weeks

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

6.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2