DMC6040SSD-13

Teknik Özellikler

Reference Standard

AEC-Q101

Input Capacitance Ciss Max Vds

1130pF @ 15V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate To Source Voltage Vgs

20V

Fet Type

N and P-Channel

Gate Charge Qg Max Vgs

20.8nC @ 10V

Continuous Drain Current Id

3.1A

Drain Currentmax Abs Id

5.1A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.04Ohm

Drain To Source Voltage Vdss

60V

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

40m Ω @ 8A, 10V

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

1.24W

Number Of Elements

2

Number Of Channels

2

Turn Off Delay Time

58.7 ns

Tepe Reflow Sıcaklığı (°C)

260

Current Continuous Drain Id25

5.1A 3.1A

Ambalaj

Tape & Reel (TR)

Fet Feature

Logic Level Gate

Parça Durumu

Active

Fall Time Typ

26.1 ns

JESD-609 Kodu

e3

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Weight

73.992255mg

Tepe Reflow Süresi (maks. sn)

30

Fabrika Tedarik Süresi

23 Weeks

Transistor Application

SWITCHING

Rise Time

6.3ns

Turn On Delay Time

3.7 ns

Pin Sayısı

8