DMC3035LSD-13

Teknik Özellikler

Parça Durumu

Obsolete

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Yayın Yılı

2012

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Number Of Channels

2

Current Continuous Drain Id25

6.9A 5A

Ambalaj

Tape & Reel (TR)

Genişlik

4.1mm

Pin Sayısı

8

Montaj

Surface Mount

Additional Feature

HIGH RELIABILITY

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

8

Vgsth Max Id

2.1V @ 250μA

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

30V

Weight

850.995985mg

Tepe Reflow Süresi (maks. sn)

40

Transistor Application

SWITCHING

Uzunluk

5.3mm

Gate To Source Voltage Vgs

20V

Fet Type

N and P-Channel

Gate Charge Qg Max Vgs

8.6nC @ 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

384pF @ 15V

Rds On Max Id Vgs

35m Ω @ 6.9A, 10V

Drainsource On Resistancemax

0.035Ohm

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

2W

Pin Sayısı

8

Pulsed Drain Currentmax Idm

30A

Transistor Element Material

SILICON

Drain Currentmax Abs Id

6.9A

Continuous Drain Current Id

5A

Terminal Formu

GULL WING