DMC3028LSDXQ-13

Teknik Özellikler

Gate Charge Qg Max Vgs

13.2nC @ 5V

Fet Type

N and P-Channel

Reference Standard

AEC-Q101

Input Capacitance Ciss Max Vds

641pF @ 15V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Voltage Vdss

30V

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.027Ohm

Rds On Max Id Vgs

27m Ω @ 6A, 10V

Transistor Element Material

SILICON

Max Power Dissipation

1.2W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id

5.8A

Drain Currentmax Abs Id

5.5A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

30V

Fet Feature

Standard

JESD-609 Kodu

e3

Parça Durumu

Active

Yayın Yılı

2000

RoHS Durumu

ROHS3 Compliant

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

5.5A 5.8A

Montaj

Surface Mount

Pin Sayısı

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Vgsth Max Id

3V @ 250μA

Additional Feature

HIGH RELIABILITY

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

8

Fabrika Tedarik Süresi

7 Weeks

Transistor Application

SWITCHING