DMC2041UFDB-13

Teknik Özellikler

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application

SWITCHING

Max Power Dissipation

1.4W

Drain To Source Voltage Vdss

20V

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

713pF @ 10V

Terminal Pozisyonu

DUAL

Vgsth Max Id

1.4V @ 250μA

Fet Type

N and P-Channel

Kılıf / Paket

6-UDFN Exposed Pad

Parça Durumu

Active

Number Of Elements

2

Current Continuous Drain Id25

4.7A 3.2A

Jesd30 Code

S-PDSO-N6

Gate Charge Qg Max Vgs

15nC @ 8V

Fabrika Tedarik Süresi

15 Weeks

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

20V

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Yayın Yılı

2015

Drain Currentmax Abs Id

4.7A

Drainsource On Resistancemax

0.04Ohm

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

40m Ω @ 4.2A, 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e4

Fet Feature

Standard

Case Connection

DRAIN

Terminal Formu

NO LEAD

Continuous Drain Current Id

3.2A

Montaj

Surface Mount