DMC1029UFDB-7

Teknik Özellikler

Fet Feature

Standard

Case Connection

DRAIN

Terminal Formu

NO LEAD

Continuous Drain Current Id

3.8A

Montaj

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

6

JESD-609 Kodu

e4

Rds On Max Id Vgs

29m Ω @ 5A, 4.5V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.029Ohm

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

12V

Parça Durumu

Active

Gate Charge Qg Max Vgs

19.6nC @ 8V

Number Of Elements

2

Current Continuous Drain Id25

5.6A 3.8A

Vgsth Max Id

1V @ 250μA

Contact Plating

Gold

Fet Type

N and P-Channel

Kılıf / Paket

6-UDFN Exposed Pad

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

6

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

12V

Max Power Dissipation

1.4W

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

914pF @ 6V

Çalışma Sıcaklığı

-55°C~150°C TJ