BSS8402DWQ-7

Teknik Özellikler

Max Power Dissipation

200mW

Drainsource On Resistancemax

7.5Ohm

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

0.115A

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G6

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Type

N and P-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

40

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Fabrika Tedarik Süresi

14 Weeks

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Feedback Capmax Crss

5 pF

Terminal Sayısı

6

Yayın Yılı

2006

Vgsth Max Id

2.5V @ 250μA

Terminal Kaplaması

Matte Tin (Sn)

Parça Durumu

Active

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

50pF @ 25V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Formu

GULL WING

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

13.5 Ω @ 500mA, 10V

Drain To Source Voltage Vdss

60V 50V

Reference Standard

AEC-Q101

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

115mA 130mA

Continuous Drain Current Id

130mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR