BSS8402DW-7-F

Teknik Özellikler

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Yükseklik

1mm

Genişlik

1.35mm

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Input Capacitance Ciss Max Vds

50pF @ 25V

Additional Feature

HIGH RELIABILITY

Akım Değeri

115mA

Continuous Drain Current Id

115mA

Current Continuous Drain Id25

115mA 130mA

Tepe Reflow Sıcaklığı (°C)

260

Temel Parça No

BSS8402DW

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

40

Nominal Vgs

2.5 V

Fet Type

N and P-Channel

Fabrika Tedarik Süresi

16 Weeks

Transistor Application

SWITCHING

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Contact Plating

Tin

Yayın Yılı

2012

Uzunluk

2.2mm

Element Configuration

Dual

Vgsth Max Id

2.5V @ 250μA

Parça Durumu

Active

Qualification Status

Not Qualified

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

60V 50V

Direnç

10Ohm

Rds On Max Id Vgs

7.5 Ω @ 50mA, 5V

Terminal Formu

GULL WING

Turn On Delay Time

10 ns

Number Of Channels

2

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Weight

6.010099mg