BC856B-13-F

Teknik Özellikler

Power Dissipation

350mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Base Voltage Vcbo

80V

Contact Plating

Tin

Collectoremitter Breakdown Voltage

65V

ECCN Kodu

EAR99

Max Power Dissipation

350mW

Emitter Base Voltage Vebo

5V

Additional Feature

HIGH RELIABILITY

Collectoremitter Saturation Voltage

-650mV

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Current Collector Cutoff Max

15μA ICBO

Power Max

310mW

Temel Parça No

BC856B

Fabrika Tedarik Süresi

19 Weeks

Vce Saturation Max Ib Ic

650mV @ 5mA, 100mA

Reach Svhc

No SVHC

Gain Bandwidth Product

200MHz

Max Collector Current

100mA

Frekans

200MHz

Transition Frequency

200MHz

Polaritychannel Type

PNP

RoHS Durumu

ROHS3 Compliant

Hfemin

220

Element Configuration

Single

Terminal Sayısı

3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Pin Sayısı

3

Yayın Yılı

2005

Continuous Collector Current

-100mA

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

260

Transistor Type

PNP

Collector Emitter Voltage Vceo

65V

JESD-609 Kodu

e3