BC847PN-7-F

Teknik Özellikler

Polarity

NPN, PNP

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA 5V / 220 @ 2mA 5V

Uzunluk

2.2mm

Yayın Yılı

2008

Terminal Formu

GULL WING

Emitter Base Voltage Vebo

6V

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Gain Bandwidth Product

300MHz

Vce Saturation Max Ib Ic

600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

Reach Svhc

No SVHC

Contact Plating

Tin

Terminal Sayısı

6

Hfemin

200

Max Power Dissipation

200mW

Pin Sayısı

6

Max Collector Current

100mA

Collectoremitter Breakdown Voltage

45V

Montaj Tipi

Surface Mount

Transition Frequency

300MHz

Collectoremitter Saturation Voltage

600mV

Temel Parça No

BC847PN

Transistor Type

NPN, PNP

Weight

6.010099mg

JESD-609 Kodu

e3

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Collector Base Voltage Vcbo

50V

Frekans

300MHz

Yükseklik

1mm

Additional Feature

HIGH RELIABILITY

Current Collector Cutoff Max

15nA ICBO

Case Connection

ISOLATED

Power Dissipation

200mW

Montaj

Surface Mount

Fabrika Tedarik Süresi

15 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

45V

Genişlik

1.35mm