BAV23SQ-13-F

Teknik Özellikler

Reverse Recovery Time

50ns

Operating Temperature Junction

-65°C~150°C

Diode Element Material

SILICON

Diode Configuration

1 Pair Series Connection

Number Of Elements

2

Yayın Yılı

2010

Diode Type

Standard

HTS Kodu

8541.10.00.70

JESD-609 Kodu

e3

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Test Voltage

200V

Terminal Sayısı

3

Terminal Kaplaması

Matte Tin (Sn)

Output Currentmax

0.4A

ECCN Kodu

EAR99

Current Average Rectified Io

400mA DC

Nonrep Pk Forward Currentmax

1.7A

Current Reverse Leakage Vr

100nA @ 200V

Reverse Currentmax

0.1μA

Number Of Phases

1

Pin Sayısı

3

Terminal Formu

GULL WING

Additional Feature

LOW LEAKAGE CURRENT

Voltage Dc Reverse Vr Max

200V

Operating Temperature Max

150°C

Montaj Tipi

Surface Mount

Voltage Forward Vf Max If

1.25V @ 200mA

Terminal Pozisyonu

DUAL

Yüzey Montaj

YES

Parça Durumu

Active

Fabrika Tedarik Süresi

19 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reference Standard

AEC-Q101

Jesd30 Code

R-PDSO-G3

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

Power Dissipation Max

0.35W

Rep Pk Reverse Voltagemax

250V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Applications

HIGH VOLTAGE FAST RECOVERY