BAS16HLP-7

Teknik Özellikler

Diode Type

Standard

RoHS Durumu

ROHS3 Compliant

Max Power Dissipation

250mW

Montaj

Surface Mount

Maks. Çalışma Sıcaklığı

150°C

Average Rectified Current

215mA

Recovery Time

4 ns

Tepe Reflow Süresi (maks. sn)

40

Max Surge Current

4A

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Tepe Reflow Sıcaklığı (°C)

260

Terminal Pozisyonu

BOTTOM

Number Of Elements

1

Terminal Sayısı

2

Reverse Recovery Time

4 ns

Additional Feature

HIGH RELIABILITY

Kılıf / Paket

0402 (1006 Metric)

Ambalaj

Tape & Reel (TR)

Max Repetitive Reverse Voltage Vrrm

100V

JESD-609 Kodu

e4

Element Configuration

Single

Parça Durumu

Active

HTS Kodu

8541.10.00.70

Diode Element Material

SILICON

Power Rating

250mW

Peak Reverse Current

500nA

Montaj Tipi

Surface Mount

Peak Nonrepetitive Surge Current

4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Capacitance Vr F

1.5pF @ 0V 1MHz

Current Reverse Leakage Vr

500nA @ 80V

Fabrika Tedarik Süresi

19 Weeks

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reach Svhc

No SVHC

Max Reverse Voltage Dc

100V

Yayın Yılı

2011

Kurşunsuz Kodu

yes

Voltage Forward Vf Max If

1.25V @ 150mA

Pin Sayısı

2

Operating Temperature Junction

-65°C~150°C