B360CE-13

Teknik Özellikler

Current Average Rectified Io

3A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Temperature Junction

-55°C~150°C

Applications

EFFICIENCY

Yüzey Montaj

YES

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material

SILICON

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Number Of Phases

1

Terminal Formu

C BEND

Jesd30 Code

R-PDSO-C2

Terminal Sayısı

2

Voltage Dc Reverse Vr Max

60V

Reverse Currentmax

200μA

Diode Type

Schottky

Kılıf / Paket

DO-214AB, SMC

Terminal Kaplaması

Matte Tin (Sn)

Current Reverse Leakage Vr

200μA @ 60V

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

150°C

Capacitance Vr F

110pF @ 4V 1MHz

Tepe Reflow Sıcaklığı (°C)

260

Output Currentmax

3A

Number Of Elements

1

HTS Kodu

8541.10.00.80

REACH Uyumluluk Kodu

not_compliant

Fabrika Tedarik Süresi

8 Weeks

Configuration

SINGLE

Rep Pk Reverse Voltagemax

60V

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Terminal Pozisyonu

DUAL

Parça Durumu

Obsolete

Nonrep Pk Forward Currentmax

80A

RoHS Durumu

ROHS3 Compliant

Voltage Forward Vf Max If

650mV @ 3A