Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transition Frequency
- 4MHz
- Dc Current Gain Hfe Min Ic Vce
- 5 @ 1A 2V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 400mV
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Configuration
- SINGLE
- Power Max
- 1W
- Collectoremitter Breakdown Voltage
- 900V
- Fabrika Tedarik Süresi
- 15 Weeks
- Transistor Type
- NPN
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- O-PBCY-W3
- Terminal Pozisyonu
- BOTTOM
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Yayın Yılı
- 2015
- Vce Saturation Max Ib Ic
- 400mV @ 250mA, 1A
- REACH Uyumluluk Kodu
- not_compliant
- Max Power Dissipation
- 1W
- Max Breakdown Voltage
- 900V
- Frequency Transition
- 4MHz
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- JESD-609 Kodu
- e3
- Polaritychannel Type
- NPN
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Box (TB)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn On Timemax Ton
- 4500ns
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Parça Durumu
- Active
- ECCN Kodu
- EAR99
- Max Collector Current
- 1.5A
- Terminal Formu
- WIRE
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