ADTA114ECAQ-13

Teknik Özellikler

JESD-609 Kodu

e3

Jesd30 Code

R-PDSO-G3

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

260

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Resistor Base R1

10 k Ω

Yüzey Montaj

YES

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY

Voltage Collector Emitter Breakdown Max

50V

Terminal Pozisyonu

DUAL

Seri

Automotive, AEC-Q101

Transition Frequency

250MHz

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Currentcollector Ic Max

100mA

Transistor Type

PNP - Pre-Biased

Parça Durumu

Active

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

RoHS Durumu

ROHS3 Compliant

Power Max

310mW

Resistor Emitter Base R2

10 k Ω

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Polaritychannel Type

PNP

Terminal Sayısı

3

Current Collector Cutoff Max

500nA

Terminal Kaplaması

Matte Tin (Sn)

Fabrika Tedarik Süresi

13 Weeks

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Configuration

SINGLE WITH BUILT-IN RESISTOR

Frequency Transition

250MHz

Tepe Reflow Süresi (maks. sn)

30

Number Of Elements

1