2N7002DWQ-7-F

Teknik Özellikler

Turn On Delay Time

7 ns

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

260

Montaj Tipi

Surface Mount

Number Of Channels

2

Power Dissipation

310mW

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-G6

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Rds On Max Id Vgs

7.5 Ω @ 50mA, 5V

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Number Of Elements

2

Fet Feature

Standard

Parça Durumu

Active

Transistor Element Material

SILICON

Yayın Yılı

2010

Reference Standard

AEC-Q101

Continuous Drain Current Id

230mA

Max Power Dissipation

310mW

Contact Plating

Tin

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

2 N-Channel (Dual)

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

11 ns

Feedback Capmax Crss

5 pF

Yükseklik

1.1mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

JESD-609 Kodu

e3

Terminal Sayısı

6

Drain To Source Voltage Vdss

60V

Input Capacitance Ciss Max Vds

50pF @ 25V

Additional Feature

HIGH RELIABILITY

Tepe Reflow Süresi (maks. sn)

40

Max Junction Temperature Tj

150°C

Fabrika Tedarik Süresi

16 Weeks

Transistor Application

SWITCHING