CDBM1100-G

Teknik Özellikler

Number Of Elements

1

HTS Kodu

8541.10.00.80

Current Reverse Leakage Vr

500μA @ 100V

Operating Temperature Junction

-50°C~150°C

Kılıf / Paket

SOD-123T

Terminal Sayısı

2

Diode Type

Schottky

Terminal Pozisyonu

DUAL

Max Reverse Voltage Dc

100V

Average Rectified Current

1A

Capacitance Vr F

120pF @ 4V 1MHz

Terminal Kaplaması

Tin (Sn)

Additional Feature

LOW POWER LOSS

Diode Element Material

SILICON

Max Reverse Leakage Current

500μA

Voltage Forward Vf Max If

850mV @ 1A

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

Jesd30 Code

R-PDSO-F2

Output Currentmax

1A

Montaj

Surface Mount

Terminal Formu

FLAT

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Operating Temperature Max

150°C

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

10 Weeks

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Max Surge Current

30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Temel Parça No

CDBM1100

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

1 (Unlimited)