Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Gain Bandwidth Product
- 100 MHz
- Continuous Collector Current
- 0.1 A
- Collector Currentmax Ic
- .1
- Package Style
- SMALL OUTLINE
- Polarity
- NPN
- Maks. Çalışma Sıcaklığı
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Polaritychannel Type
- NPN
- Emitter Base Voltage Vebo
- 6 V
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Yüzey Montaj
- YES
- Package Description
- SMALL OUTLINE, R-PDSO-G3
- Rohs Code
- Yes
- Risk Rank
- 1.8
- Collectoremitter Voltagemax
- 45 V
- Package Body Material
- PLASTIC/EPOXY
- Package Shape
- RECTANGULAR
- Ambalaj
- MouseReel
- Element Configuration
- Single
- Üretici Parça No
- BC847B-G
- Hfemin
- 420
- Max Power Dissipation
- 200 mW
- RoHS
- Details
- Collector Emitter Voltage Vceo Max
- 45 V
- Transistor Polarity
- NPN
- Birim Ağırlık
- 0.000282 oz
- Collectoremitter Saturation Voltage
- 500 mV
- Number Of Terminals
- 3
- Maximum Dc Collector Current
- 100 mA
- Dc Current Gainmin Hfe
- 200
- Gain Bandwidth Product Ft
- 100 MHz
- Power Dissipationmax Abs
- .2
- REACH Uyumluluk Kodu
- compliant
- Collector Emitter Voltage Vceo
- 45 V
- Seri
- BC847
- Transition Frequencynom Ft
- 100
- Pd Power Dissipation
- 200 mW
- Collector Base Voltage Vcbo
- 50 V
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