Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Collectorbase Gain Hfe Min
- 15
- Ambalaj
- Tube
- Configuration
- Single
- Minimum Operating Temperature
- - 65 C
- Collector Emitter Voltage Vceo Max
- 100 V
- Fabrika Paket Adedi
- 20
- Pd Power Dissipation
- 200 W
- Continuous Collector Current
- 16 A
- Montaj Stili
- Through Hole
- Transistor Polarity
- PNP
- Collector Base Voltage Vcbo
- 100 V
- Collectoremitter Saturation Voltage
- 1 V
- Kılıf / Paket
- TO-3-2
- Emitter Base Voltage Vebo
- 7 V
- Maximum Dc Collector Current
- 20 A
- RoHS
- N
- Gain Bandwidth Product Ft
- 1 MHz
- Seri
- 2N6029
- Maks. Çalışma Sıcaklığı
- + 200 C
İlgili Ürünler
ON Semiconductor
12A02CH-TL-E
Single BJT Transistors
ON Semiconductor
12A02MH-TL-E
Single BJT Transistors
ON Semiconductor
15C01C-TB-E
Single BJT Transistors
Sanyo
15C01M-TL-E
Single BJT Transistors
ON Semiconductor
15C01SS-TL-E
Single BJT Transistors
ON Semiconductor
15C02CH-TL-E
Single BJT Transistors
ON Semiconductor
15C02MH-TL-E
Single BJT Transistors
Microchip Technology
2C2222A
Single BJT Transistors