Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Polarity
- NPN
- Collector Emitter Voltage Vceo Max
- 140 V
- Maximum Dc Collector Current
- 600 mA
- Ambalaj
- Bulk
- Dc Current Gain Hfe Max
- 250
- Montaj Stili
- Through Hole
- Kılıf / Paket
- TO-92
- Dc Collectorbase Gain Hfe Min
- 60
- Collectoremitter Saturation Voltage
- 250 mV
- Pd Power Dissipation
- 625 mW
- Birim Ağırlık
- 0.016000 oz
- Collector Base Voltage Vcbo
- 160 V
- Fabrika Paket Adedi
- 2500
- Maks. Çalışma Sıcaklığı
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Gain Bandwidth Product Ft
- 300 MHz
- RoHS
- Details
- Emitter Base Voltage Vebo
- 6 V
- Configuration
- Single
- Continuous Collector Current
- 600 mA
İlgili Ürünler
ON Semiconductor
12A02CH-TL-E
Single BJT Transistors
ON Semiconductor
12A02MH-TL-E
Single BJT Transistors
ON Semiconductor
15C01C-TB-E
Single BJT Transistors
Sanyo
15C01M-TL-E
Single BJT Transistors
ON Semiconductor
15C01SS-TL-E
Single BJT Transistors
ON Semiconductor
15C02CH-TL-E
Single BJT Transistors
ON Semiconductor
15C02MH-TL-E
Single BJT Transistors
Microchip Technology
2C2222A
Single BJT Transistors