Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Collectorbase Gain Hfe Min
- 20 at 500 mA
- Collectoremitter Saturation Voltage
- 600 mV
- Kılıf / Paket
- TO-66-2
- Seri
- 2N49
- Configuration
- Single
- Pd Power Dissipation
- 25 W
- Collector Emitter Voltage Vceo Max
- 80 V
- Montaj Stili
- Through Hole
- Fabrika Paket Adedi
- 30
- Ambalaj
- Tube
- Collector Base Voltage Vcbo
- 80 V
- Continuous Collector Current
- 1 A
- Gain Bandwidth Product Ft
- 3 MHz
- RoHS
- Details
- Transistor Polarity
- PNP
- Dc Current Gain Hfe Max
- 150 at 500 mA
İlgili Ürünler
ON Semiconductor
12A02CH-TL-E
Single BJT Transistors
ON Semiconductor
12A02MH-TL-E
Single BJT Transistors
ON Semiconductor
15C01C-TB-E
Single BJT Transistors
Sanyo
15C01M-TL-E
Single BJT Transistors
ON Semiconductor
15C01SS-TL-E
Single BJT Transistors
ON Semiconductor
15C02CH-TL-E
Single BJT Transistors
ON Semiconductor
15C02MH-TL-E
Single BJT Transistors
Microchip Technology
2C2222A
Single BJT Transistors