Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Configuration
- Single
- Transistor Polarity
- NPN
- Kılıf / Paket
- TO-92-3
- RoHS
- Details
- Ambalaj
- Bulk
- Montaj Stili
- Through Hole
- Dc Collectorbase Gain Hfe Min
- 55 at 4.5 V, 2 mA
- Seri
- 2N3397
- Maks. Çalışma Sıcaklığı
- + 150 C
- Collector Emitter Voltage Vceo Max
- 25 V
- Pd Power Dissipation
- 360 mW
- Collector Base Voltage Vcbo
- 25 V
- Dc Current Gain Hfe Max
- 500 at 4.5 V, 2 mA
- Emitter Base Voltage Vebo
- 5 V
- Maximum Dc Collector Current
- 100 nA
- Fabrika Paket Adedi
- 2500
- Continuous Collector Current
- 100 mA
- Minimum Operating Temperature
- - 65 C
İlgili Ürünler
ON Semiconductor
12A02CH-TL-E
Single BJT Transistors
ON Semiconductor
12A02MH-TL-E
Single BJT Transistors
ON Semiconductor
15C01C-TB-E
Single BJT Transistors
Sanyo
15C01M-TL-E
Single BJT Transistors
ON Semiconductor
15C01SS-TL-E
Single BJT Transistors
ON Semiconductor
15C02CH-TL-E
Single BJT Transistors
ON Semiconductor
15C02MH-TL-E
Single BJT Transistors
Microchip Technology
2C2222A
Single BJT Transistors