NE25139-T1

Teknik Özellikler

Parça Durumu

Obsolete

Transistor Application

AMPLIFIER

Nominal Gerilim

13V

Voltage Test

5V

Continuous Drain Current Id

40A

Operating Temperature Max

125°C

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Additional Feature

LOW NOISE

Akım Değeri

40mA

Temel Parça No

NE251

Fet Technology

METAL SEMICONDUCTOR

Transistor Type

MESFET Dual Gate

Gain

20dB

Montaj

Surface Mount

RoHS Durumu

Non-RoHS Compliant

Noise Figure

1.1dB

Current Test

10mA

Case Connection

SOURCE

Terminal Sayısı

4

Operating Mode

DUAL GATE, DEPLETION MODE

Ds Breakdown Voltagemin

13V

Feedback Capmax Crss

0.03 pF

Ambalaj

Cut Tape (CT)

Kılıf / Paket

TO-253-4, TO-253AA

Terminal Formu

GULL WING

Configuration

SINGLE

Frekans

900MHz

Transistor Element Material

GALLIUM ARSENIDE

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Pin Sayısı

4