E2HM4075

Teknik Özellikler

Qg Gate Charge

108 nC

Tip

MOSFET

Vds Drainsource Breakdown Voltage

500 V

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Type

1 N-Channel

Typical Turnon Delay Time

16 ns

Ambalaj

Tube

Rds On Drainsource Resistance

120 mOhms

Transistor Polarity

N-Channel

Maks. Çalışma Sıcaklığı

+ 175 C

Montaj Stili

Through Hole

Birim Ağırlık

0.211644 oz

Id Continuous Drain Current

44 A

Genişlik

4.82 mm

Rise Time

84 ns

Kılıf / Paket

TO-247-3

Fabrika Paket Adedi

450

Number Of Channels

1 Channel

Vgs Th Gatesource Threshold Voltage

2 V

Seri

FDH44N50

Yükseklik

20.82 mm

Ürün Tipi

MOSFET

Uzunluk

15.87 mm

Pd Power Dissipation

750 W

RoHS

Details

Channel Mode

Enhancement

Typical Turnoff Delay Time

45 ns

Forward Transconductance Min

11 S

Technology

Si

Vgs Gatesource Voltage

- 30 V, + 30 V