BIDW50N65T

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

650 V

Temel Ürün No

BIDW50N

Montaj Tipi

Through Hole

Configuration

Single Diode

Tedarikçi Cihaz Paketi

TO-247

Igbt Type

Trench Field Stop

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Package Type

TO-247

Maximum Collector Emitter Voltage

650 V

Gate Charge

123 nC

Ürün Durumu

Active

Td Onoff25c

37ns/125ns

Montaj Stili

Through Hole

Switching Energy

3mJ (on), 1.1mJ (off)

Ambalaj

Tube

Maks. Çalışma Sıcaklığı

+ 150 C

Collector Emitter Voltage Vceo Max

650 V

Maximum Gate Emitter Voltage

±20V

Continuous Collector Current Ic Max

100 A

Fabrika Paket Adedi

600

Reverse Recovery Time Trr

37.5 ns

Technology

Si

Kılıf / Paket

TO-247-3

Current Collector Pulsed Icm

150 A

Test Conditions

400V, 50A, 10Ohm, 15V

RoHS

Details

Paket

Tube

Currentcollector Ic Max

100 A

Minimum Operating Temperature

- 55 C

Vceon Max Vge Ic

2.2V @ 15V, 50A

Pd Power Dissipation

416 W

Giriş Tipi

Standard

Power Max

416 W

Collectoremitter Saturation Voltage

1.65 V

Continuous Collector Current At25 C

100 A

Ürün Tipi

IGBT Transistors