BIDNW30N60H3

Teknik Özellikler

Ambalaj

Tube

Maks. Çalışma Sıcaklığı

+ 150 C

Td Onoff25c

30ns/67ns

Ürün Durumu

Active

Gate Charge

76 nC

Maximum Collector Emitter Voltage

600 V

Montaj Stili

Through Hole

Switching Energy

1.85mJ (on), 450μJ (off)

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Igbt Type

Trench Field Stop

Tedarikçi Cihaz Paketi

TO-247N-3L

Package Type

TO-247N

Voltage Collector Emitter Breakdown Max

600 V

Configuration

Single Diode

Montaj Tipi

Through Hole

Temel Ürün No

BIDNW30N

Collectoremitter Saturation Voltage

1.65 V

Power Max

230 W

Ürün Tipi

IGBT Transistors

Continuous Collector Current At25 C

60 A

Minimum Operating Temperature

- 55 C

Giriş Tipi

Standard

Pd Power Dissipation

230 W

Vceon Max Vge Ic

2V @ 15V, 30A

Current Collector Pulsed Icm

120 A

Test Conditions

400V, 30A, 10Ohm, 15V

Kılıf / Paket

TO-247-3

Currentcollector Ic Max

60 A

Paket

Tube

RoHS

Details

Reverse Recovery Time Trr

28 ns

Fabrika Paket Adedi

600

Maximum Gate Emitter Voltage

±20V

Continuous Collector Current Ic Max

60 A

Collector Emitter Voltage Vceo Max

600 V

Technology

Si