BLL1214-35,112

Teknik Özellikler

Ds Breakdown Voltagemin

75 V

Yüzey Montaj

YES

RoHS Durumu

Supplier Unconfirmed

Maximum Frequency Mhz

1400

Voltage Test

36V

Rohs Code

Yes

Mounting

Screw

Maximum Vswr

5

Typical Forward Transconductance S

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Temperaturemax

200 °C

Kılıf / Paket

SOT467C

Case Connection

SOURCE

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

unknown

Package Height

4.67(Max)

Channel Type

N

Package Shape

RECTANGULAR

Military

No

Part Life Cycle Code

Obsolete

Highest Frequency Band

L BAND

Number Of Elements

1

Gain

13dB

Hts

8541.29.00.75

Maximum Gate Source Voltage V

±15

Pin Sayısı

3

Process Technology

LDMOS

Usage Level

Military grade

Risk Rank

5.74

Ihs Manufacturer

NXP SEMICONDUCTORS

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Seri

*

Tedarikçi Cihaz Paketi

SOT467C

Maximum Drain Source Voltage V

75

Package Width

5.97(Max)

ECCN Kodu

EAR99

Manufacturer Package Code

SOT467C

Typical Power Gain Db

13(Min)