BLF6G27LS-75,118

Teknik Özellikler

Frekans

2.7 GHz

Pcb Changed

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Source Voltage V

13

Maximum Vswr

10

Test Voltage

28 V

Drain To Source Voltage Vdss

65 V

Maximum Drain Source Resistance Mohm

250@6.15V

Transistor Type

LDMOS

Typical Drain Efficiency

23

Standard Package Name

SOT

Typical Power Gain Db

17

Element Configuration

Single

Min. Çalışma Sıcaklığı

-65 °C

Current Rating Amps

18A

Maximum Continuous Drain Current A

18

Mode Of Operation

1-Carrier N-CDMA

RoHS Durumu

Non-RoHS Compliant

Pin Sayısı

3

Yayın Yılı

2009

Output Power W

75(Typ)

Nominal Gerilim

65V

Minimum Frequency Mhz

2500

Lead Shape

Flat

Max Frequency

2.7 GHz

Eccn Us

EAR99

Montaj

Surface Mount

Gain

17 dB

Number Of Elements Per Chip

1

Voltage Test

28V

Maximum Drain Source Voltage V

65

Drain To Source Breakdown Voltage

65 V

Ambalaj

Tape & Reel (TR)

Maximum Operating Temperature C

200

Configuration

Single

Max Output Power

75 W

Voltage Rating

65 V

RoHS

Compliant

Gate To Source Voltage Vgs

13 V

Channel Mode

Enhancement