BLF6G10LS-260PRN:1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Reference Standard

IEC-60134

Configuration

COMMON SOURCE, 2 ELEMENTS

Ambalaj

Tube

Frekans

917.5MHz~962.5MHz

Voltage Test

28V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain Currentmax Abs Id

64A

Transistor Type

LDMOS (Dual), Common Source

Transistor Element Material

SILICON

Power Output

40W

Ds Breakdown Voltagemin

65V

Current Rating Amps

64A

Jesd30 Code

R-CDFP-F4

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Obsolete

Number Of Elements

2

Yüzey Montaj

YES

Polaritychannel Type

N-CHANNEL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Transistor Application

AMPLIFIER

Temel Parça No

BLF6G10

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

4

Gain

22dB

Current Test

1.8A

Yayın Yılı

2010

RoHS Durumu

RoHS Compliant

Nominal Gerilim

65V

Kılıf / Paket

SOT539B