BLF6G10-135RN,112

Teknik Özellikler

Maximum Vswr

10

Maximum Gate Source Voltage V

13

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pcb Changed

3

Frekans

871.5MHz~891.5MHz

Typical Drain Efficiency

28

Manufacturer Package Code

SOT502A

Risk Rank

5.84

Transistor Type

LDMOS

Maximum Drain Source Resistance Mohm

100(Typ)@6.15V

Maximum Continuous Drain Current A

32

Current Rating Amps

32A

Brand Name

NXP Semiconductor

Typical Power Gain Db

21

Part Package Code

SOT

Number Of Elements Per Chip

1

Gain

21dB

Eccn Us

EAR99

Minimum Frequency Mhz

869

Nominal Gerilim

65V

Output Power W

26.5(Typ)

Yayın Yılı

2012

Mode Of Operation

2-Carrier W-CDMA

RoHS Durumu

RoHS Compliant

Configuration

Single

Maximum Operating Temperature C

225

Ambalaj

Tray

Üretici Parça No

BLF6G10-135RN,112

Rohs Code

Yes

Maximum Drain Source Voltage V

65

Voltage Test

28V

Mounting

Screw

Process Technology

LDMOS

Power Output

26.5W

Channel Mode

Enhancement

Ihs Manufacturer

NXP SEMICONDUCTORS

Parça Durumu

Obsolete

Channel Type

N

Package Length

34.16(Max)

Pin Sayısı

3